发明名称 Plasma chemical vapor deposition apparatus
摘要 Disclosed is a plasma chemical vapor deposition apparatus for forming an amorphous thin film, a microcrystalline thin film or a polycrystalline thin film on a surface of a target substrate by utilizing a glow discharge generated by an electric power supplied from a power source, comprising a reaction vessel, means for supplying a reactant gas into the reaction vessel, discharge means for discharge a waste gas of the reactant gas out of the reaction vessel, a ladder-shaped electrode for discharge generation arranged within the reaction vessel, a power source for supplying a high frequency power of 30 MHz to 200 MHz to the ladder-shaped electrode for a glow discharge generation, a heater for heating and supporting a target substrate, the heater being arranged within the reaction vessel in parallel to the ladder-shaped electrode for discharge generation, and a power distributor for uniformly distributing a high frequency power to the ladder-shaped electrode for discharge generation through a power supply wire.
申请公布号 US6363881(B2) 申请公布日期 2002.04.02
申请号 US19990232600 申请日期 1999.01.19
申请人 MITSUBISHI HEAVY INDUSTRIES, LTD. 发明人 MURATA MASAYOSHI;TAKEUCHI YOSHIAKI;MASHIMA HIROSHI;TAKANO AKEMI;YOSHIDA HIROHISA
分类号 C23C16/50;H01J37/32;H01L21/205;H01L31/04;(IPC1-7):C23C16/509 主分类号 C23C16/50
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