MOS-gated power device with doped polysilicon body and process for forming same

摘要

An improved MOS-gated power device 300 with a substrate 101 having an upper layer 101a of doped monocrystalline silicon of a first conduction type that includes a doped well region 107 of a second conduction type. The substrate further includes at least one heavily doped source region 111 of the first conduction type disposed in a well region 107 at an upper surface of the upper layer, a gate region 106 having a conductive material 105 electrically insulated from the source region by a dielectric material, a patterned interlevel dielectric layer 112 on the upper surface overlying the gate and source regions 114, and a heavily doped drain region of the first conduction type 115. The improvement includes body regions 301 containing heavily doped polysilicon of the second conduction type disposed in a well region 107 at the upper surface of the monocrystalline substrate.