| 摘要 |
A new and improved power MOS transistor having a protective diode with an increased breakdown voltage difference and less sheet resistivity is disclosed. In an up-drain type MOSFET, an n-type well layer has its top surface in which an elongated p-type base region is provided adjacent to a deep n+-type region (drain region). The p-type base region is formed so that it partly overlaps the deep n+ region. A p+-type region (p-type base region) is connected to a source electrode. A surge bypassing diode D1 is thus formed between the source and drain of the MOSFET.
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