Gallium-nitride-based semiconductor light emitting device and fabrication method

摘要

A GaN-based semiconductor light emitting device is provided that has superior light emitting characteristics by controlling occurrence of a threading dislocation and keeping the flatness of a film GaN-based semiconductor light emitting device fabrication method comprises forming steps of at least forming an undoped gallium-nitride underlying layer on a low-temperature buffer layer while keeping the pressure in a reactor at a value close to atmospheric pressure.