发明名称 |
SEMICONDUCTOR MEMORY |
摘要 |
<p>PROBLEM TO BE SOLVED: To provide a semiconductor memory which can perform high speed operation by suppressing phase deviation between output data and an echo signal without sacrificing a cycle time and a data output time. SOLUTION: An address register 5 and a data register 7 are controlled by a clock taken by a clock buffer 9, and synchronism of read-out/write-in of data of a normal array 1 is controlled. The device is provided with a memory cell array 1a for echo signal which shares a word line with the normal cell array 1 and in which an expected value pattern is written. The device is provided with a read-out/write-in circuit 6a for echo signal and a data register 7a for echo signal which are arranged respectively in parallel to the read-out/ write-in circuit 6 and the data register 6 of the normal cell array 1 side and has the same constitution at the memory cell array 1a for echo signal side.</p> |
申请公布号 |
JP2002093175(A) |
申请公布日期 |
2002.03.29 |
申请号 |
JP20000273596 |
申请日期 |
2000.09.08 |
申请人 |
TOSHIBA MICROELECTRONICS CORP;TOSHIBA CORP |
发明人 |
TSURUTO TAKAHIRO;HARIMA TAKAYUKI |
分类号 |
G11C11/413;G11C7/10;G11C11/407;G11C11/41;G11C16/02;G11C16/06;(IPC1-7):G11C11/413 |
主分类号 |
G11C11/413 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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