发明名称 CHARGING PUMP CIRCUIT
摘要 PROBLEM TO BE SOLVED: To prevent bipolar action in a charging pump circuit without fail. SOLUTION: The sizes of a clock driver and an MOS transistor for charge transfer are set so that a condition ofΔVdsmax<Vbi holds.ΔVdsmax isΔVds1 (P)+ΔVds1 (N)+ΔVds (Ifst);ΔVds1 (P) is drop in the voltage of the source and the drain of the p-channel output transistor of the clock driver due to initial charge transfer current Ifst;ΔVds1 (N) is drop in the voltage of the source and the drain of the n-channel output transistor of the clock driver due to the initial charge transfer current Ifst;ΔVds (Ifst) is drop in the voltage of the source and the drain of the MOS transistor for charge transfer due to the initial charge transfer current Ifst; and Vbi is the forward ON-state voltage of a parasitic bipolar transistor.
申请公布号 JP2002095242(A) 申请公布日期 2002.03.29
申请号 JP20000277681 申请日期 2000.09.13
申请人 SANYO ELECTRIC CO LTD 发明人 NANO TAKAO
分类号 H02M3/07;(IPC1-7):H02M3/07 主分类号 H02M3/07
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