| 摘要 |
PROBLEM TO BE SOLVED: To enable a manufacture of a multilayer wiring structure, having a small wiring delay and hence which will not disturb high-speed operation by enabling embedding of a narrow gap and realizing a low permittivity insulating film, having a high resistance to a CMP. SOLUTION: A method of forming a multilayer wiring comprises a step of removing a desorbing agent component from a layer coated with a solution, containing the agent and of formed with a film containing a silicone compound and having heat resistance property of 300 [ deg.C] or higher and forming the insulating film.
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