| 摘要 |
PROBLEM TO BE SOLVED: To provide a method for manufacturing a semiconductor device where a semiconductor device comprising a reliable gate insulating film of a high dielectric film is formed in a self-conforming process. SOLUTION: This method includes the processes in which a first insulating film and an oxide film are formed on a semiconductor substrate, a dummy gate electrode comprising a first metal film is formed on the oxide film; the oxide film reacts with the first metal film in a thermal process, so that the oxide film is converted into a high dielectric film comprising a metal oxide film constituting the dummy gate electrode; a second insulating film is formed on the resulting semiconductor substrate, and the second insulating film is flattened until the dummy gate electrode surface is exposed by forming the dummy gate electrode in the second insulating film; the dummy gate electrode is removed to form a groove at the second insulating film; and at least the second metal film is embedded in the groove, so that a metal gate electrode is formed.
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