| 摘要 |
PROBLEM TO BE SOLVED: To provide a technology for keeping freeness flexibility of mask material and arrangement of a gate electrode, when a halo region is formed at a semiconductor device having a damascene gate structure. SOLUTION: Halo regions 710 and 711 are formed in the direction almost vertical to a substrate S by ion implantation with a dummy gate as a mask, and then a side wall spacer is formed on the side wall of the dummy gate. The dummy gate and the side wall spacer are replaced with gate electrodes 5a and 5b. Even if ions are implanted at an angle almost parallel to the normal direction of a semiconductor substrate surface, and the halo regions 710 and 711 can be formed under the gate electrodes 5a and 5b which are formed layer. An adjoining pattern is less likely to hinder ion implantation, as compared to the case, in which a halo region is formed by obliquely implanting ions to the substrate.
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