发明名称 SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME
摘要 PROBLEM TO BE SOLVED: To reduce leakage current between copper traces sandwiching an interlayer insulation film, while maintaining a low permittivity when the interlayer insulation film, composed of multiple layers of insulation films exhibiting low permittivity is formed between the copper traces. SOLUTION: With respect to the method for forming the interlayer insulation film exhibiting low permittivity on a substrate 21 on the surface of which a copper trace 23 is exposed, the interlayer insulation film, composed of multiple layers of insulation films 24, 25 and 29 and the insulation film 24 of the multiple layers of insulation films 24, 25 and 29 which is adjacent to the copper trace 23, is formed by turning a film forming gas consisting of an alkyl compound, having a siloxane bond and either of nitrogen (N2) or ammonia (NH3) into a plasma and causing reaction.
申请公布号 JP2002093805(A) 申请公布日期 2002.03.29
申请号 JP20010000873 申请日期 2001.01.05
申请人 CANON SALES CO INC;HANDOTAI PROCESS KENKYUSHO:KK 发明人 SHIOTANI YOSHIMI;OHIRA KOICHI;MAEDA KAZUO;SUZUKI TOMOMI;IKAKURA HIROSHI;YAMAMOTO YOICHI
分类号 C23C16/42;C23C16/30;H01L21/31;H01L21/312;H01L21/316;H01L21/768;H01L23/522;(IPC1-7):H01L21/316 主分类号 C23C16/42
代理机构 代理人
主权项
地址