| 摘要 |
PROBLEM TO BE SOLVED: To provide a boron-doped material of high quality for a semiconductor, where a discolored part due to color irregularity, stain, or the like is not observed with optical microscope, and to provide a method for easily manufacturing a boron-doped material of high quality for a semiconductor, which is superior in reproducibility of the effect for preventing generation of discolored parts. SOLUTION: The boron-doped material for a semiconductor consists of 30 to 80% of hexagonal boron nitride having maximum grain diameter of 30 μm or less and 70 to 20% having mullite of a maximum grain diameter of 100 μm or less, and a discolored part exceeding 100 μm is not observed with optical microscope. After a mixture powder, comprising 6 to 20% of high purity silica glass powder whose maximum grain diameter is 30 μm or less, B2O3 content is 0.2% or less and water content is 1.0% or less, 30 to 80% of hexagonal boron nitride powder and 14 to 50% of α-alumina powder is formed, it is subjected to hot press sintering at a temperature of 1,400 to 1,700 deg.C and the boron-doped material for a semiconductor is manufactured. |
