发明名称 AL-DOPED ZNO THIN FILM HUMIDITY SENSOR
摘要 PURPOSE: An Al-doped ZnO thin film humidity sensor is provided to produce a high performance humidity sensor at a low cost by using a compound coating liquid applied through spin coating and thermal treatment. CONSTITUTION: A ZnO coating liquid doped with 0.6wt% of Al is coated on an alumina substrate coated with a silver electrode by spin coating three to five times. After coating, thermal treatment is performed at 300deg.C for 10 minutes. After final coating, annealing is performed at 500-700deg.C for an hour. A humidity sensor is formed of a porous film having nano-sized particles. The thickness of the thin film is less than 235nm, and the particle size of the oxide semiconductor is less than 20.5nm.
申请公布号 KR20020023821(A) 申请公布日期 2002.03.29
申请号 KR20010082160 申请日期 2001.12.11
申请人 TAI, WEON PIL 发明人 KIM, JUN GYU;OH, JAE HUI;TAI, WEON PIL
分类号 G01N27/12;(IPC1-7):G01N27/12 主分类号 G01N27/12
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