发明名称 |
AL-DOPED ZNO THIN FILM HUMIDITY SENSOR |
摘要 |
PURPOSE: An Al-doped ZnO thin film humidity sensor is provided to produce a high performance humidity sensor at a low cost by using a compound coating liquid applied through spin coating and thermal treatment. CONSTITUTION: A ZnO coating liquid doped with 0.6wt% of Al is coated on an alumina substrate coated with a silver electrode by spin coating three to five times. After coating, thermal treatment is performed at 300deg.C for 10 minutes. After final coating, annealing is performed at 500-700deg.C for an hour. A humidity sensor is formed of a porous film having nano-sized particles. The thickness of the thin film is less than 235nm, and the particle size of the oxide semiconductor is less than 20.5nm. |
申请公布号 |
KR20020023821(A) |
申请公布日期 |
2002.03.29 |
申请号 |
KR20010082160 |
申请日期 |
2001.12.11 |
申请人 |
TAI, WEON PIL |
发明人 |
KIM, JUN GYU;OH, JAE HUI;TAI, WEON PIL |
分类号 |
G01N27/12;(IPC1-7):G01N27/12 |
主分类号 |
G01N27/12 |
代理机构 |
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代理人 |
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