High-gain pnp bipolar junction transistor in a cmos device and method for forming the same

摘要

An integrated circuit device includes a semiconductor substrate, an NMOS, a PMOS contiguous with the NMOS, and a composite pnp bipolar junction transistor contiguous with the NMOS. The composite pnp bipolar junction transistor includes a lateral npn bipolar junction transistor having a first current gain, and a lateral pnp bipolar junction transistor having a second current gain, wherein the current gain of the composite pnp bipolar junction transistor equals the first current gain multiplied by the second current gain.