发明名称 |
Method and apparatus for processing substrates |
摘要 |
A substrate processing apparatus includes a processing chamber and a gas supply line, wherein a natural oxide film removing gas including a first gas activated by a second gas activated by a plasma discharge is supplied to the processing chamber through the gas supply line to remove a natural oxide film on a wafer, and wherein the first gas and the second gas are supplied to the gas supply line along a first direction and a second direction and an angle between the first and the second direction ranges from about 90° to 180°.
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申请公布号 |
US2002036066(A1) |
申请公布日期 |
2002.03.28 |
申请号 |
US20010960947 |
申请日期 |
2001.09.25 |
申请人 |
HITACHI KOKUSAI ELECTRIC INC., |
发明人 |
OGAWA UNRYU;TAKAGAKI TETSUYA;ISHII AKINORI;UEDA TATSUSHI;SATO TAKAYUKI |
分类号 |
H01L21/302;H01J37/32;H01L21/00;H01L21/205;H01L21/311;(IPC1-7):C23F1/02 |
主分类号 |
H01L21/302 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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