发明名称 Configuration for the execution of a plasma based sputter process
摘要 The present invention relates to a system for executing a plasma-based sputtering method, such as for example a PVD (Physical Vapor Deposition) method. In a process chamber (1), a plasma (2) is produced in order to accelerate ionized particles, carried away from a sputter target (21), through the plasma (2) towards a substrate (3), using an electrical field. In the process chamber (1), between the plasma (2) and the substrate (3) a magnetic field component (6) is produced that is situated parallel to a substrate surface (5). Through the magnetic field component (6), the angular distribution of the ionized particles is deflected from its flight path perpendicular to the substrate surface, so that impact angles are produced that have a greater angular scattering.
申请公布号 US2002036132(A1) 申请公布日期 2002.03.28
申请号 US20010832988 申请日期 2001.04.11
申请人 BRINKMANN RALF-PETER;KERSCH ALFRED 发明人 BRINKMANN RALF-PETER;KERSCH ALFRED
分类号 C23C14/35;C23C16/50;H01J37/32;(IPC1-7):C23C14/35 主分类号 C23C14/35
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