Bipolar transistor used for high frequency circuits and highly integrated electronic circuits comprises a base layer having a partial vertical structure and a contact arranged on a side wall of the vertical structure

摘要

Bipolar transistor (1) comprises a layer sequence consisting of an emitter layer (5), a base layer (4) and a collector layer (2, 3). The base layer has at least a partial vertical structure and a contact (9, 10) of the base layer is arranged on at least one side wall of the vertical structure. An Independent claim is also included for a method for producing the bipolar transistor. Preferred Features: The side wall of the base layer with the contact runs at an angle to the layer sequence. The layer sequence has a pyramidal or conical structure. The contact comprises a highly doped diffusion layer arranged on the side wall of the base layer. The layer sequence consists of layers constructed from different semi-conductor materials, preferably silicon.