发明名称 Capacitor and method for fabricating semiconductor device
摘要 After a lower electrode made of Pt, for example, has been formed, impurity atoms (e.g., hydrogen atoms) which suppress decrease in stiffness of the electrode at a high temperature are introduced into the lower electrode. Then, even when the lower electrode is heated to a high temperature in an oxidizing atmosphere in the subsequent process step of forming a capacitive insulating film of e.g., BST on the lower electrode, the decrease in stiffness of the lower electrode is suppressible. Accordingly, it is possible to prevent the deformation of the lower electrode, which might otherwise result from the coagulation of metal atoms such as Pt atoms in the lower electrode.
申请公布号 US2002037624(A1) 申请公布日期 2002.03.28
申请号 US20010942038 申请日期 2001.08.30
申请人 MORI YOSHIHIRO;OKUNO YASUTOSHI;TSUZUMITANI AKIHIKO 发明人 MORI YOSHIHIRO;OKUNO YASUTOSHI;TSUZUMITANI AKIHIKO
分类号 H01L27/04;H01L21/02;H01L21/822;H01L21/8242;H01L21/8246;H01L27/105;H01L27/108;(IPC1-7):H01L21/20 主分类号 H01L27/04
代理机构 代理人
主权项
地址