发明名称 METHOD FOR DEPOSITNG HARD CARBON FILM ON METAL BASE MATERIAL
摘要 PROBLEM TO BE SOLVED: To improve adhesion between a metal base material 30 and a hard carbon film (DLC) 33 and also to improve the effect of the hard carbon film as a protective film by hardening the base material. SOLUTION: By adding gaseous nitrogen to inert gas at bombardment, nitriding treatment is carried out simultaneously with bombardment to harden the metal base material 30. Further, as to an intermediate layer 31, a nitride- formable metal is used and the metal base material 30 and the intermediate layer 31 are bound together via nitrogen to improve adhesion. A gradient structure 32 can be formed between the intermediate layer 31 and the hard carbon film (DLC) 33.
申请公布号 JP2002088465(A) 申请公布日期 2002.03.27
申请号 JP20000275444 申请日期 2000.09.11
申请人 MATSUSHITA ELECTRIC IND CO LTD 发明人 YAMADA OSAMU;HIRAO TAKASHI
分类号 F16C33/24;C23C14/06;C23C14/34;(IPC1-7):C23C14/06 主分类号 F16C33/24
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