发明名称 |
METHOD FOR DEPOSITNG HARD CARBON FILM ON METAL BASE MATERIAL |
摘要 |
PROBLEM TO BE SOLVED: To improve adhesion between a metal base material 30 and a hard carbon film (DLC) 33 and also to improve the effect of the hard carbon film as a protective film by hardening the base material. SOLUTION: By adding gaseous nitrogen to inert gas at bombardment, nitriding treatment is carried out simultaneously with bombardment to harden the metal base material 30. Further, as to an intermediate layer 31, a nitride- formable metal is used and the metal base material 30 and the intermediate layer 31 are bound together via nitrogen to improve adhesion. A gradient structure 32 can be formed between the intermediate layer 31 and the hard carbon film (DLC) 33.
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申请公布号 |
JP2002088465(A) |
申请公布日期 |
2002.03.27 |
申请号 |
JP20000275444 |
申请日期 |
2000.09.11 |
申请人 |
MATSUSHITA ELECTRIC IND CO LTD |
发明人 |
YAMADA OSAMU;HIRAO TAKASHI |
分类号 |
F16C33/24;C23C14/06;C23C14/34;(IPC1-7):C23C14/06 |
主分类号 |
F16C33/24 |
代理机构 |
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代理人 |
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地址 |
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