| 摘要 |
PROBLEM TO BE SOLVED: To provide a detecting device and detecting method for measurement mark and a manufacturing method of semiconductor device capable of reduction in the image contrast of a measurement mark when reducing the height of a measurement mark by a treatment after the formation of the measurement mark in the formation of a laminated film on the measurement mark or when the layer or bed structure having the measurement mark formed thereon having a reflectivity or refractive index hardly detectable by a measuring device, and never causing deterioration of measurement precision or impossibleness of measurement even if the forming state of the measurement mark is not good. SOLUTION: The axial direction M of the sensor of this measurement mark detecting device is inclined at an angle (a) not conformed to the normal direction L of a wafer having the measurement mark to be measured provided thereon, so that the wafer can be set non-movably. The normal line L of the wafer may be inclined at an angle b not conformed to the axial direction M of the sensor of the detecting device, so that the senor can be set non-movably. Consequently, the image contrast of the measurement mark when inclined can be reinforced.
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