| 摘要 |
PURPOSE: A method for forming a contact of a semiconductor device is provided to completely eliminate an interlayer dielectric on an etch stop layer while an etch process is no more performed regarding the etch stop layer, by stacking the etch stop layer on a hard mask layer and by stacking an oxide layer on the etch stop layer. CONSTITUTION: A word line(108) and the hard mask layer(106) are stacked on a semiconductor substrate(110) having a predetermined lower structure. The etch stop layer is stacked on the hard mask layer. The oxide layer is stacked on the etch stop layer, and a photoresist layer is stacked. An exposure process is performed to pattern the resultant structure. An etch process is selectively etched through an open portion of the photoresist layer to perform a patterning process. A spacer layer(112) is stacked on the side surface of the resultant structure. A blanket etch process is performed regarding the resultant structure to form a gate. After the interlayer dielectric is stacked to fill the gate, a masking etch process is carried out to perform a contact etch process. A polysilicon layer is stacked inside the contact and the etch stop layer is eliminated. A planarization process is performed by a chemical mechanical polishing(CMP) method to form a plug poly.
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