Method for forming semiconductor device having low parasite capacitance using air gap and self-aligned contact plug,申请号US09/740948-传众专利搜索

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发明名称	Method for forming semiconductor device having low parasite capacitance using air gap and self-aligned contact plug
摘要
申请公布号	US6362073(B1)	申请公布日期	2002.03.26
申请号	US09/740948	申请日期	2000.12.21
申请人		发明人
分类号		主分类号
代理机构		代理人
主权项
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