| 摘要 |
A stacked semiconductor device includes a plurality of stacked semiconductor chips, each of the semiconductor chips including a penetrating electrode which penetrates from a front surface to a back surface of the semiconductor chip, a first electrode formed on the front surface, a second electrode formed on the back surface and wiring patterns formed on the front and back surfaces for selectively connecting the first and second electrodes through the penetrating electrode, the first electrode of a lower semiconductor chip abutting the second electrode of an upper semiconductor chip with respect to adjacent two of the stacked semiconductor chips. |
