| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device which prevents malfunction of an element in a semiconductor region for a control circuit and which reduces variations in characteristics of an element in a power semiconductor region. SOLUTION: A support substrate 1 is electrically insulated from an N-type low-concentration active-layer substrate 3 via a buried insulating film 2. The power semiconductor region 6 is formed on the surface of the substrate 3. The semiconductor region 7, for the control circuit, which is electrically insulated from the semiconductor region 6 is formed. A deep groove 20 is formed from the rear side in a region corresponding to a part directly under a drain contact region 15 in the semiconductor region 6 on the support substrate 1. An electrode layer 21 is formed along the groove 20 on the rear side of the support substrate 1. The electrode layer 21 is fixed to a VSS potential. An N+ type diffusion region 23 is formed on the interface between the electrode layer 21 and the support substrate 1.
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