发明名称 SWITCHING CIRCUIT, AMPLIFYING CIRCUIT AND METHOD FOR MANUFACTURING BIPOLAR TRANSISTOR
摘要 PROBLEM TO BE SOLVED: To provide a switching circuit having a high withstand voltage, a fast switching speed, a small deviation of timing and small power loss and an amplifying circuit or the like having a high withstand voltage, a large amplification factor and little distortions and power loss. SOLUTION: An emitter E, a high-voltage collector CH and a low-voltage collector CL are each made of an n-type region. A breakdown voltage between the collector CH and a base B is higher than that between the collector C1 and the base B. The base B is made of a p-type region. If a control voltage is a value or larger which is decided according to a current flowing between the collector CL and the base B when a positive electrode of a DC power source is connected to the collector CH via a load, a negative electrode is connected to the emitter E, and the control voltage is applied to the base B, the current flows to the load. When the collector CH is connected to the collector CL via a resistor RF and the positive electrode of the power source is connected to the collector CH via a resistor RL, a current obtained by amplifying the signal supplied to the base B flows to the resistor RL.
申请公布号 JP2002084172(A) 申请公布日期 2002.03.22
申请号 JP20000272458 申请日期 2000.09.08
申请人 NTT DATA CORP 发明人 HANEDA SHOJI
分类号 G05F3/18;H01L21/331;H01L29/08;H01L29/73;H03F1/02;H03F1/32;H03F1/34;H03K17/04;H03K17/06;H03K17/60 主分类号 G05F3/18
代理机构 代理人
主权项
地址