发明名称 POWER SEMICONDUCTOR DEVICE AND OVERCURRENT PROTECTION CIRCUIT
摘要 PROBLEM TO BE SOLVED: To effectively prevent an erroneous operation of overcurrent protection due to a noise generated in sensing voltage. SOLUTION: A comparator 210 outputs a signal Vcom1 of 'H' level, when a sensing voltage Vs of an auxiliary IGBT 102 is larger than a reference voltage Vref1. A capacitor 107 of a collector voltage monitor charges a current Ica which flows at a turn-off time and an overcurrent state time. As a result, differential circuits 107 and 105 output a monitor voltage Vcs indicating a differential result; and when a main IGBT 101 is turned off at a normal operation time or the main IGBT 101 is turned on at an abnormal operation time. A comparator 211 outputs a signal Vcom2 of 'H' level, when the voltage Vcs is larger than a reference voltage Vref2. An overcurrent-deciding circuit 212 outputs a signal VT which indicates overcurrent state, only when the outputs of both the comparators 210 and 211 are at 'H' level.
申请公布号 JP2002084173(A) 申请公布日期 2002.03.22
申请号 JP20000274417 申请日期 2000.09.11
申请人 MITSUBISHI ELECTRIC CORP 发明人 MARUMO TAKASHI
分类号 H02H3/087;H02H7/20;H02M1/00;H03K17/08;H03K17/60;H03K19/003 主分类号 H02H3/087
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