| 摘要 |
<p>PROBLEM TO BE SOLVED: To provide a semiconductor device, together with an optoelectronic device as well as a manufacturing method thereof, which comprises a TFT whose characteristics is stabilized by cleaning the interface between a semiconductor film and a gate insulating film. SOLUTION: At forming TFTs 10, 20, and 30 on an active matrix substrate 2, a semiconductor film 10a of an amorphous silicon film is formed on a substrate 100, and then the semiconductor film 10a is laser-annealed. A thin first gate insulating film 131 is formed on the surface of the semiconductor film 10a by a high-pressure wet oxidation, on the surface of which a resist mask 401 is formed. Under this condition, the first gate insulating film 131 and the semiconductor film 10a are collectively etched, and then the resist mask 401 is removed to form a second gate insulating film 132.</p> |
