| 摘要 |
PROBLEM TO BE SOLVED: To prevent deterioration in characteristics of a ferroelectric capacitor and make process integration possible when manufacturing a ferroelectric mem ory cell having a structure for connecting an upper electrode of the ferroelectric capacitor to a pass-transistor. SOLUTION: The ferroelectric memory cell consists of a series combination of one pass-transistor and one ferroelectric capacitor. When manufacturing the ferroelectric memory cell, a contact plug 15 is buried in an insulation film 13 on a source region of the pass-transistor, and the upper end face of the contact plug 15 and the upper electrode 19 of the capacitor are connected to each other with an electrode interconnection 22 formed reflowing at least one material among Al, AlCu, AlCuSi, and Cu. |
