发明名称 |
Method for forming an interconnection line using a hydrosilsesquioxane (HSQ) layer as an interlayer insulating layer |
摘要 |
Disclosed is a method for forming interconnection lines using a hydrosilsesquioxane (HSQ) layer as an interlayer insulating layer. A HSQ layer is formed over a semiconductor substrate and an entire surface of the HSQ layer is subjected to plasma treatment. It is then possible to pattern the HSQ layer using photo etching, for the bond structure density of an upper part of the HSQ layer has been increased due to the plasma treatment. An opening is formed by patterning the treated HSQ layer and then a conductive layer filling the opening is formed. In this manner, a multilayer interconnection structure can be formed with a low dielectric layer made of HSQ, thereby reducing the resistance-capacitance (RC) delay.
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申请公布号 |
US2002033486(A1) |
申请公布日期 |
2002.03.21 |
申请号 |
US20010919628 |
申请日期 |
2001.07.30 |
申请人 |
SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
KIM WON-JIN;LEE SOO-GEUN;SHIN HONG-JAE;HAN JAE-HYUN;KIM JAE-HAK;KANG HO-KYU |
分类号 |
H01L21/3105;H01L21/312;H01L21/768;H01L23/522;H01L23/532;(IPC1-7):H01L29/74;H01L31/111 |
主分类号 |
H01L21/3105 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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