发明名称 |
SEMICONDUCTOR DEVICE AND FABRICATION METHOD THEREFOR |
摘要 |
With a stopper layer 19 as an etching stopper, a second groove 14a and a contact hole 13a are formed. Copper is buried inside the second groove 14a and the contact hole 13a, thereby forming a plug layer 22 and an overlying wiring layer 21 connected to an underlying wiring layer 17 via the plug layer 22. The stopper layer 19 is comprised of Si, C and N as essential components. First and second cap layers 18 and 23 are also comprised of Si, C and N as essential components. |
申请公布号 |
WO0223625(A2) |
申请公布日期 |
2002.03.21 |
申请号 |
WO2001JP07880 |
申请日期 |
2001.09.11 |
申请人 |
TOKYO ELECTRON LIMITED;AKAHORI, TAKASHI;CHUNG, GISHI |
发明人 |
AKAHORI, TAKASHI;CHUNG, GISHI |
分类号 |
H01L21/314;H01L21/768;H01L23/532 |
主分类号 |
H01L21/314 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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