发明名称 |
Susceptor and surface processing method |
摘要 |
A susceptor provided as a base of a liquid crystal substrate in a vacuum chamber of a thin film deposition apparatus is provided. The susceptor includes a susceptor main body and a stepped portion provided on the susceptor main body to support the substrate from the bottom. The stepped portion is formed of a size smaller than the substrate. By the provision of the stepped portion, conduction between a film formed at an end plane of the substrate and a film formed at the portion around the substrate can be avoided.
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申请公布号 |
US2002033381(A1) |
申请公布日期 |
2002.03.21 |
申请号 |
US20010813152 |
申请日期 |
2001.03.21 |
申请人 |
NAKABAYASHI TETSUYA;UJIMASA HITOSHI;ZAITSU KAZUYUKI;KOKURA MASAFUMI |
发明人 |
NAKABAYASHI TETSUYA;UJIMASA HITOSHI;ZAITSU KAZUYUKI;KOKURA MASAFUMI |
分类号 |
G02F1/13;C23C14/50;C23C14/56;C23C16/458;H01L21/203;(IPC1-7):C23F1/00 |
主分类号 |
G02F1/13 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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