发明名称 Susceptor and surface processing method
摘要 A susceptor provided as a base of a liquid crystal substrate in a vacuum chamber of a thin film deposition apparatus is provided. The susceptor includes a susceptor main body and a stepped portion provided on the susceptor main body to support the substrate from the bottom. The stepped portion is formed of a size smaller than the substrate. By the provision of the stepped portion, conduction between a film formed at an end plane of the substrate and a film formed at the portion around the substrate can be avoided.
申请公布号 US2002033381(A1) 申请公布日期 2002.03.21
申请号 US20010813152 申请日期 2001.03.21
申请人 NAKABAYASHI TETSUYA;UJIMASA HITOSHI;ZAITSU KAZUYUKI;KOKURA MASAFUMI 发明人 NAKABAYASHI TETSUYA;UJIMASA HITOSHI;ZAITSU KAZUYUKI;KOKURA MASAFUMI
分类号 G02F1/13;C23C14/50;C23C14/56;C23C16/458;H01L21/203;(IPC1-7):C23F1/00 主分类号 G02F1/13
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