| 摘要 |
PURPOSE: Write-once thin-film memory is provided, in which the memory cells have thin-film barriers that are damaged when the write potential is applied. Write-once operations is performed by damaging the thin-film barriers of at least some of the memory cells. CONSTITUTION: Traces functioning as word lines(14) extend along the x-direction in a plane on one side of the array(10). Traces functioning as bit lines(16) extend along the y-direction in a plane on an opposite side of the array(10). There is one word line(14) for each row of the array(10) and one bit line(16) for each column of the array(10). Each memory cell(12) is located at a cross point of a corresponding word line(14) and bit line(16). The memory cells(12) form a resistive cross-point array because they include resistive elements that are coupled together through many parallel paths. The resistance seen at one cross point equals the resistance of the memory cell(12) at that cross point in parallel with resistances of memory cells(12) in the other rows and columns. The device(8)further includes a read/write circuit (represented by first and second row circuits(18) and(20) and first and second column circuits(22) and(24) for applying read and write potentials to selected memory cells during read and write operations. To generate the read and write currents, the first and second row circuits(18) and(20) apply appropriate potentials to the word lines(14), and the first and second column circuits(22) and(24) apply appropriate potentials to the column lines(16).
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