METHOD FOR FILM FORMATION OF GATE INSULATOR, APPARATUS FOR FILM FORMATION OF GATE INSULATOR, AND CLUSTER TOOL
摘要
This film forming method comprises a first step of forming a first insulation film the essential component of which is a material having a first dielectric constant over the surface of a semiconductor substrate and a second step of forming a second insulation film the essential component of which is a material having a second dielectric constant larger than the first one over the first insulation film to be thicker than this first insulation film. Since the process of film formation of a high dielectric constant material that constitutes the second insulation film is executed by following the formation of a barrier layer that is the first insulation film, it is possible to form a gate of high dielectric material stable to the substrate.
申请公布号
WO0223614(A1)
申请公布日期
2002.03.21
申请号
WO2001JP08000
申请日期
2001.09.14
申请人
TOKYO ELECTRON LIMITED;KIRYU, HIDEKI;TAKAHASHI, TSUYOSHI;AOYAMA, SHINTARO;SHINRIKI, HIROSHI;IGETA, MASANOBU