A method of forming a hybrid mask for optically transferring a lithographic pattern corresponding to an integrated circuit from the mask onto a semiconductor substrate by use of an optical exposure tool. The method includes the steps of forming at least one noncritical feature on the mask utilizing one of a low-transmission phase-shift mask (pattern) and a non-phase shifting mask (pattern), and forming at least one critical feature on the mask utilizing a high-transmission phase-shift mask (pattern). <IMAGE> <IMAGE> <IMAGE> <IMAGE> <IMAGE> <IMAGE>
申请公布号
EP1152289(A3)
申请公布日期
2002.03.20
申请号
EP20010303869
申请日期
2001.04.27
申请人
ASML MASKTOOLS NETHERLANDS B.V.
发明人
CHEN, JANG FUNG;CALDWELL, ROGER;LAIDIG, THOMAS;WAMPLER, KURT E.