发明名称 Hybrid phase-shift mask
摘要 A method of forming a hybrid mask for optically transferring a lithographic pattern corresponding to an integrated circuit from the mask onto a semiconductor substrate by use of an optical exposure tool. The method includes the steps of forming at least one noncritical feature on the mask utilizing one of a low-transmission phase-shift mask (pattern) and a non-phase shifting mask (pattern), and forming at least one critical feature on the mask utilizing a high-transmission phase-shift mask (pattern). <IMAGE> <IMAGE> <IMAGE> <IMAGE> <IMAGE> <IMAGE>
申请公布号 EP1152289(A3) 申请公布日期 2002.03.20
申请号 EP20010303869 申请日期 2001.04.27
申请人 ASML MASKTOOLS NETHERLANDS B.V. 发明人 CHEN, JANG FUNG;CALDWELL, ROGER;LAIDIG, THOMAS;WAMPLER, KURT E.
分类号 G03F1/00;G03F1/26;G03F1/30;G03F1/32;G03F1/34;G03F7/20;H01L21/027 主分类号 G03F1/00
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