| 摘要 |
PURPOSE: Provided are a polymer comprising specific recurring units, a resist composition comprising the polymer as a base resin, and a patterning process using the resist composition. CONSTITUTION: The polymer characteristically comprises recurring units represented by the formula(1a) or (1b) and having a weight average molecular weight of 1,000 to 500,000, wherein k is 0 or 1, m is 0, 1, 2, 3 or 4, and n is 1 or 2. A resist composition comprising the polymer as a base resin is sensitive to high-energy radiation, has excellent sensitivity, resolution, and etching resistance, and lends itself to micropatterning with electron beams or deep-UV.
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