发明名称 Oxide/organic polymer multilayer thin films deposited by chemical vapor deposition
摘要 Multilayer thin films consisting of alternating layers of oxide and organic polymer dielectric materials are manufactured by chemical vapor deposition using a CVD apparatus comprising separate precursor volatilization/dissociation areas. Methods are described for the manufacture of multilayered films. The electrical properties of the multilayered films make the films of embodiments of this invention suitable for use as dielectric materials for semiconductor manufacture. The multilayered films of embodiments this invention reduce RC delay and cross-talk, thereby permitting increased density, higher frequency performance and greater reliability of semiconductor devices for use in the electronics industry.
申请公布号 US6358863(B1) 申请公布日期 2002.03.19
申请号 US19990303231 申请日期 1999.04.30
申请人 QUESTER TECHNOLOGY, INC. 发明人 DESU SESHU B.;SENKEVICH JOHN J.
分类号 C23C16/30;C23C16/40;C23C16/56;H01L21/312;H01L21/316;H01L21/768;H01L23/522;(IPC1-7):C23C16/40 主分类号 C23C16/30
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