| 发明名称 | Metal doped semiconductor nanocrystals and methods of making the same | ||
| 摘要 | Doped semiconductor nanocrystals and methods of making the same are provided. | ||
| 申请公布号 | US9260652(B2) | 申请公布日期 | 2016.02.16 |
| 申请号 | US201013381777 | 申请日期 | 2010.07.01 |
| 申请人 | Board of Trustees of the University of Arkansas | 发明人 | Peng Xiaogang;Xie Renguo |
| 分类号 | C09K11/88;C09K11/58;C09K11/62;C09K11/02;C09K11/70 | 主分类号 | C09K11/88 |
| 代理机构 | Smith Moore Leatherwood LLP | 代理人 | Smith Moore Leatherwood LLP ;Wimbish J. Clinton |
| 主权项 | 1. A colloidal doped semiconductor nanocrystal comprising: a III/V host semiconductor material; and metal dopant, wherein the colloidal semiconductor nanocrystal has a dopant emission greater than about 620 nm, wherein the III/V host semiconductor material comprises InP, and wherein the metal dopant comprises Cu. | ||
| 地址 | Little Rock AR US | ||