发明名称 |
Method for forming shallow trench isolation structures |
摘要 |
A method for forming a shallow trench isolation structure within a semiconductor substrate includes forming a trench opening within a semiconductor substrate having an oxidation-resistant material as a top surface. An oxide liner is formed on inner surfaces of the trench opening. A silicon material is then introduced into the trench opening and over the top surface. The silicon material is subsequently oxidized, either before or after a polishing operation is used to planarize the structure. Dishing related problems are avoided during polishing because the silicon or oxidized silicon material has a polishing rate similar to the oxidation resistant material, and less than that of conventionally formed CVD oxides.
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申请公布号 |
US6358785(B1) |
申请公布日期 |
2002.03.19 |
申请号 |
US20000588058 |
申请日期 |
2000.06.06 |
申请人 |
LUCENT TECHNOLOGIES, INC. |
发明人 |
CHITTIPEDDI SAILESH;NANDA ARUN KUMAR;VELAGA ANKINEEDU |
分类号 |
H01L21/762;(IPC1-7):H01L21/338;H01L21/20 |
主分类号 |
H01L21/762 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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