Method for forming self-aligned contacts and interconnection lines using dual damascene techniques

摘要

The present invention further provides a method for forming self-aligned contacts using a dual damascene techniques that reduces the number of process steps and results in a reduction in cycle time, cost and yield loss. In a preferred embodiment, a method for forming a contact and a channel in a dielectric layer over a region on a semiconductor substrate is provided. The contact is self-aligned. The contact and channel are formed by (1) forming a contact opening in the dielectric layer, (2) forming a channel opening in the dielectric layer, wherein the channel opening encompasses the contact opening, (3) extending the contact opening to expose a portion of the region on the semiconductor substrate; and (4) filling the contact opening and the channel opening with a conductive material to form a contact and a channel, respectively.