| 摘要 |
A substrate (901 in FIGS. 1A and 1B) is overlaid with a base film (902), an amorphous semiconductor film (903) and a first protective insulating film (904), and a thermal conduction layer (905) having a light transmissivity is selectively formed. Subsequently, the amorphous semiconductor film (903) is crystallized by laser annealing. The thermal conduction layer (905) functions to control the outflow rate of heat from the semiconductor film (903), and a crystalline semiconductor film centering round a region formed with the thermal conduction layer (905) is prepared by utilizing the difference of temperature distributions over the substrate (901). In the crystalline semiconductor film thus prepared, the location and size of a crystal grain have been controlled. A TFT capable of high-speed operation is realized by employing the crystalline semiconductor film as the channel forming region of the TFT.
|
