| 摘要 |
PURPOSE: Provided are a silicon-based copolymer resin for bilayer resist and a preparation thereof and a method for forming a bilayer resist pattern of a semiconductor element by using the resin, which can form a fine pattern without resist pattern collapse. CONSTITUTION: The silicon-based copolymer resin is selected from the copolymers represented by the formulas 1-4 and produced by reacting a silicon compound having trimethylsilyl, dimethylsilyl, or t-butyldimethylsilyl, maleic anhydride, t-butyl acrylate, and acrylic acid in the presence of a polymerization initiator. And the method for forming the bilayer resist pattern comprises the steps of: spraying HMDS gas on the surface of a wafer; spreading a first resist on the wafer, wherein the first resist is a g-line or i-line resist; softly baking the wafer; spreading a second resist thinly on the first resist, wherein the second resist is the silicon-based copolymer resin; softly baking the second resist spread wafer; exposing and developing the second resist and cleaning and drying; removing a silicon oxidation membrane generated from the developing process.
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