| 摘要 |
PROBLEM TO BE SOLVED: To avoid forming unwanted I-E junctions or grain boundary junctions. SOLUTION: In a structure of an oxide superconductor film 11/layer insulation film 12/oxide superconductor film 15, the insulation film 12 has contact holes 13 and is composed of insulation films 12A, 12B. The insulation film 12B facing the superconductor film 11 at a substrate 10 has a higher dry etching rate than that of the superconductor film 11 while the insulation film 12A facing the superconductor film 15 has a dry etching rate equal to or lower than that of the film 15. The insulator substrate 10 and the insulation films 12A and 16 are each made of LaSrAlTaOX and the superconductor films 11, 15 and 18 are each made of Y1Ba2Cu3O7-d and the insulation film 12B is made of In2O3.
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