发明名称 CHARGE TRANSFER DEVICE
摘要 PROBLEM TO BE SOLVED: To stably reduce reset field-through noise without receiving influence of the variation of the characteristics of a transistor nor generating whisker pulse noise. SOLUTION: A charge transfer device is provided with floating diffusion 23 which converts signal charges transferred from a CCD 21 into a voltage, a MOS transistor 24 which discharges the signal charges accumulated in the diffusion 23 based on a reset pulseϕR, and a source follower 31 which performs current amplification on the voltage at a charge injecting point P. The transfer device is also provided with another source follower 32 which performs current amplification on the output voltage of the source follower 31 when a load is changed based on the reset pulseϕR.
申请公布号 JP2002077734(A) 申请公布日期 2002.03.15
申请号 JP20000263823 申请日期 2000.08.31
申请人 NEC CORP 发明人 TSUNAI SHIRO
分类号 H01L29/762;H01L21/339;H04N5/335;H04N5/357;H04N5/363;H04N5/372;H04N5/3745;(IPC1-7):H04N5/335 主分类号 H01L29/762
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