| 摘要 |
PROBLEM TO BE SOLVED: To provide an effective etching method for LSI failure analysis. SOLUTION: In failure analysis of a semiconductor device of which the failure cause is due to a metal wiring formed on a semiconductor silicon substrate, by combination of a wet etching and a dry etching, the surface of the upper layer metal wiring 5 is damaged by a wet etching. Then, by applying a dry etching on it, only metal wiring 5 to be removed can be removed.
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