| 发明名称 |
METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE |
| 摘要 |
PROBLEM TO BE SOLVED: To prevent tungsten from abnormally growing on a contact hole when the tungsten is deposited by a method for forming a tungsten plug in the contact hole through an adhesive layer. SOLUTION: The adhesive layer is formed by providing a titanium film 3, a titanium oxide film (TiONy) 4, and a titanium nitride film 5 in this order.
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| 申请公布号 |
JP2002076001(A) |
申请公布日期 |
2002.03.15 |
| 申请号 |
JP20000268060 |
申请日期 |
2000.09.05 |
| 申请人 |
ASAHI KASEI MICROSYSTEMS KK |
发明人 |
MATSUI HIROSHI;OKUSA YOSHIHIRO |
| 分类号 |
C23C14/06;C23C16/08;H01L21/3205;H01L21/768;H01L23/52;(IPC1-7):H01L21/320 |
主分类号 |
C23C14/06 |
| 代理机构 |
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