发明名称 SILICON SOLAR CELL UNDERLYING SUBSTRATE, SILICON SOLAR CELL AND THEIR MANUFACTURING METHOD
摘要 <p>PROBLEM TO BE SOLVED: To obtain an Si solar cell which has high photoelectric conversion efficiency by improving light confinement effect without increasing grain boundary density of crystalline Si, and its manufacturing method. SOLUTION: In an underlying substrate 101, a metallic reflection layer 12 and a diffusion prevention layer 13 are laminated one by one on a support 11. The silicon solar cell underlying substrate 101 wherein a surface of the diffusion prevention layer 13 is irregular since a plurality of spoon-cut recesses are formed by emitting ion beam obliquely by an ion milling method, and its manufacturing method are provided, and an Si solar cell 110 is obtained by forming a photoelectric conversion layer 10, a transparent film 18 and a collecting electrode 19 on the underlying substrate 101.</p>
申请公布号 JP2002076385(A) 申请公布日期 2002.03.15
申请号 JP20000256317 申请日期 2000.08.25
申请人 MITSUBISHI HEAVY IND LTD 发明人 KONDO KATSUHIKO;TAKEUCHI YOSHIAKI;NISHIMIYA TATSUYUKI;YAMAGUCHI KENGO
分类号 H01L31/04;(IPC1-7):H01L31/04 主分类号 H01L31/04
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