发明名称 LOW DIELECTRIC MATERIAL INCLUDING POLYHEDRAL OLIGOMERIC SILSESQUIOXANE AND METHOD FOR FABRICATING EXTREMELY LOW DIELECTRIC THIN FILM
摘要 PURPOSE: A low dielectric material including polyhedral oligomeric silsesquioxane is provided to realize a dielectric constant not higher than 2.5, by manufacturing mixture composition of the polyhedral oligomeric silsesquioxane and silicon oxide aerogel. CONSTITUTION: A dielectric material includes the polyhedral oligomeric silsesquioxane having an organic substitution and the silicon oxide aerogel which have a weight ratio of 9.9:0.1 to 1:9. The dielectric material further includes tetra alkoxysilan. The tetra alkoxysilan is tetra methoxysilan or tetra ethoxysilan. A sol-gel reaction between the polyhedral oligomeric silsesquioxane having the organic substitution and the silicon oxide aerogel is performed to fabricate the dielectric material.
申请公布号 KR20020020504(A) 申请公布日期 2002.03.15
申请号 KR20000053708 申请日期 2000.09.09
申请人 POSTECH FOUNDATION 发明人 LEE, MUN HO;OH, WON TAE
分类号 H01L21/31;(IPC1-7):H01L21/31 主分类号 H01L21/31
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