| 摘要 |
PROBLEM TO BE SOLVED: To design a sense amplifier circuit for a DRAM device providing improved read-out and write-in speed. SOLUTION: Additional circuit elements 64A, 64B being operated as a resistive path are added between latch nodes 66A, 66B and bit lines 62A, 62B. Functionally, this additional circuit element separates a latch node from bit line capacitance being comparatively large during write-in operation, and is operated so that the latch node can change a state more quickly. The additional circuit element may have various constitution such as a N channel transistor of which the gate is connected to pumping voltage level VCCP, a resistor, a depletion type transistor, and a CMOS pass gate.
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