METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE

摘要

PROBLEM TO BE SOLVED: To provide a method for manufacturing a semiconductor device capable of further improving on-current characteristics even when a TFT is formed from a polycrystalline amorphous semiconductor film, and compressing its unevenness. SOLUTION: The method for manufacturing the semiconductor device comprises the steps of forming the semiconductor film made of the amorphous semiconductor film on a substrate 50 made of a glass by a low temperature process, and then making the semiconductor film polycrystalline by laser annealing (crystallizing step). The method further comprises the step of then heat treating a substrate 20 in a high temperature atmosphere at 400 to 600 deg.C in a heat treating unit 600 (heat treating step). In this case, a treating chamber 610 is evacuated to exhaust contaminated atmosphere therein, then clean gas is introduced into the chamber and then heat treated. Thus, a surface of the semiconductor film can be held clean.