| 摘要 |
PROBLEM TO BE SOLVED: To provide a high frequency semiconductor device, which has an amplifier with high thermal stability and reduced degradation of high frequency characteristics. SOLUTION: The high frequency semiconductor device comprises a power amplifier 10, where a driver stage 12 of the amplifier 10 comprises multi-finger HBTs 121 to 12n, which form multi-stages with one emitter basic HBTs connected in parallel, an output stage 14 of the amplifier 10 comprises multi-finger HBT 141, which forms single stage with two emitter basic HBTs connected in parallel; to prevent a pn-junction capacitor between an emitter layer and a base layer in the driver stage 14 from increasing and to eliminate thermal non-uniformity in the output stage 14.
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