| 摘要 |
PROBLEM TO BE SOLVED: To make insulation breakdown less likely to occur in a gate oxide film, even is wiring for connecting cells is long. SOLUTION: A drain terminal 6 of a logic cell A and a gate terminal 7 of a logic cell B are connected with a wire L. A capacity 1 is formed in the logic cell B, and the capacity 1 and the gate terminal 7 are connected with a wiring 8.
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